SSG55N60P PDF and Equivalents Search

 

SSG55N60P Specs and Replacement

Type Designator: SSG55N60P

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 195 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 55 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 250 pF

Package: TO259

 SSG55N60P Substitution

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SSG55N60P datasheet

 6.1. Size:60K  1
 ssg55n60.pdf pdf_icon

SSG55N60P

SSG55N60 series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 55 AMP /600 Volts TO-254 and TO-254Z 1.65 V saturation ultrafast IGBT TO-258 and TO-259 Features Lowest ON-resistance in the industry Hermetically Sealed, Isolated Pa... See More ⇒

 9.1. Size:1421K  secos
 ssg5509a.pdf pdf_icon

SSG55N60P

SSG5509A N & P-Ch Enhancement Mode Power MOSFET N-Ch 6.1 A, 30 V, RDS(ON) 30 m Elektronische Bauelemente P-Ch -4.8 A, -30 V, RDS(ON) 55 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG5509A uses advanced trench technology to B provide excellent on-resistance extremely efficient and ... See More ⇒

Specs: KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , SGT40N60NPFDPN , YGW40N65F1 , AOD5B65M1 , AOTF15B65M1 , CRG15T120BNR3S , GPU200HF120D2SE , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 .

History: T0800TB45E | STGY50NB60HD | NGTB40N60FLWG | SRE60N065FSUD6 | RJH60F0DPQ-A0 | SRE60N120FSSDATP

Keywords - SSG55N60P transistor spec

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