SSG55N60P Datasheet and Replacement
Type Designator: SSG55N60P
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 195 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 55 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 250 pF
Package: TO259
SSG55N60P substitution
SSG55N60P Datasheet (PDF)
ssg55n60.pdf

SSG55N60 series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 55 AMP /600 Volts TO-254 and TO-254Z 1.65 V saturation ultrafast IGBT TO-258 and TO-259 Features: Lowest ON-resistance in the industry Hermetically Sealed, Isolated Pa
ssg5509a.pdf

SSG5509A N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 m Elektronische Bauelemente P-Ch: -4.8 A, -30 V, RDS(ON) 55 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8DESCRIPTION The SSG5509A uses advanced trench technology to Bprovide excellent on-resistance extremely efficient and
Datasheet: KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , RJP30H1DPD , YGW40N65F1 , AOD5B65M1 , AOTF15B65M1 , CRG15T120BNR3S , GPU200HF120D2SE , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 .
History: AOK40B120H1 | BG150B12LY2-I | NGB15N41A | LEGM75BE120L5H | AOB20B65M1 | JNG40T65HYU1 | MIXA80W1200TEH
Keywords - SSG55N60P transistor datasheet
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History: AOK40B120H1 | BG150B12LY2-I | NGB15N41A | LEGM75BE120L5H | AOB20B65M1 | JNG40T65HYU1 | MIXA80W1200TEH



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