RCB1565SL1 Datasheet. Specs and Replacement
Type Designator: RCB1565SL1 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO263
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RCB1565SL1 Substitution
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RCB1565SL1 datasheet
rcf1565sl1 rcp1565sl1 rcb1565sl1 rcd1565sl1.pdf
IGBT RCF(P/B/D)1565SL1 RCF1565SL1 RCP1565SL1 RCB1565SL1 RCD1565SL1 15A 650V IGBT UPS PFC 15A 650V , V =1.8V @I =15A CE(sat) C ... See More ⇒
Specs: SSG55N60P, YGW40N65F1, AOD5B65M1, AOTF15B65M1, CRG15T120BNR3S, GPU200HF120D2SE, RCF1565SL1, RCP1565SL1, CRG60T60AK3HD, RCD1565SL1, KGF65A6H, MGF65A6H, RJH65T14DPQ-A0, GT30J122A, GT60M324, DG25X12T2, DG40X12T2
Keywords - RCB1565SL1 transistor spec
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History: APT100GT120JU2
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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