IXDT30N120D1 PDF and Equivalents Search

 

IXDT30N120D1 Specs and Replacement

Type Designator: IXDT30N120D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃

tr ⓘ - Rise Time, typ: 70 nS

Coesⓘ - Output Capacitance, typ: 250 pF

Package: TO268

 IXDT30N120D1 Substitution

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IXDT30N120D1 datasheet

 ..1. Size:86K  ixys
 ixdh30n120 ixdt30n120 ixdh30n120d1 ixdt30n120d1.pdf pdf_icon

IXDT30N120D1

IXDH 30N120 VCES = 1200 V High Voltage IGBT IXDH 30N120 D1 IC25 = 60 A with optional Diode IXDT 30N120 VCE(sat) typ = 2.4 V IXDT 30N120 D1 Short Circuit SOA Capability C C Square RBSOA TO-247 AD (IXDH) G G E E G C C (TAB) IXDH 30N120 IXDH 30N120 D1 E IXDT 30N120 IXDT 30N120 D1 TO--268 AA (IXDT) Symbol Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V E C (T... See More ⇒

 4.1. Size:54K  ixys
 ixdh30n120au1 ixdt30n120au1.pdf pdf_icon

IXDT30N120D1

High Voltage IGBT IXDH 30N120AU1 VCES = 1200 V IXDT 30N120AU1 IC25 = 50 A with Diode VCE(sat) typ = 2.5 V Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings TO-247 AD (IXDH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C (TAB) G VGES Continuous 20 V C E VGEM Transient 30 V TO-268 AA (IXDT) IC25 TC = 25 C5... See More ⇒

Specs: IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 , IXDN75N120 , IXDT30N120 , IXDT30N120AU1 , GT30G122 , IXGA12N100 , IXGA12N100A , IXGA12N100AU1 , IXGA12N100U1 , IXGA12N60C , IXGA12N60CD1 , IXGA15N100C , IXGA15N120B .

Keywords - IXDT30N120D1 transistor spec

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