All IGBT. DG40X12T2 Datasheet

 

DG40X12T2 Datasheet and Replacement


   Type Designator: DG40X12T2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 337 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 28 nS
   Qgⓘ - Total Gate Charge, typ: 310 nC
   Package: TO247
      - IGBT Cross-Reference

 

DG40X12T2 Datasheet (PDF)

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DG40X12T2

DG40X12T2 IGBT Discrete DOSEMI IGBT DG40X12T2 1200V/40A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10s short circuit capability Low switching loss

Datasheet: RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A , GT60M324 , DG25X12T2 , GT45F122 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I , BG150B12UY3-I , BG200B12UY3-I .

History: STGWA50M65DF2 | IGC114T170S8RH | DIM2400ESM17-A | IGW100N60H3 | DIM1000ECM33-TS | IGW30N60TP | IGC10T65QE

Keywords - DG40X12T2 transistor datasheet

 DG40X12T2 cross reference
 DG40X12T2 equivalent finder
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