All IGBT. DG40X12T2 Datasheet

 

DG40X12T2 IGBT. Datasheet pdf. Equivalent


   Type Designator: DG40X12T2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 337
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 28
   Total Gate Charge (Qg), typ, nC: 310
   Package: TO247

 DG40X12T2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DG40X12T2 Datasheet (PDF)

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 dg40x12t2.pdf

DG40X12T2 DG40X12T2

DG40X12T2 IGBT Discrete DOSEMI IGBT DG40X12T2 1200V/40A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10s short circuit capability Low switching loss

Datasheet: RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A , GT60M324 , DG25X12T2 , FGH60N60SFD , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I , BG150B12UY3-I , BG200B12UY3-I .

 

 
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