BT25T120CKR Spec and Replacement, IGBT Equivalent Finder, Cross Reference

BT25T120CKR Specs and Replacement

Type Designator: BT25T120CKR

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 208 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 59 pF

Package: TO247

BT25T120CKR Substitution

- IGBTⓘ Cross-Reference Search

BT25T120CKR datasheet

..1. Size:321K wuxi china
bt25t120ckr.pdf pdf_icon

Silicon FS Trench IGBT R BT25T120 CKR General Description VCES 1200 V Using HUAJING's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25 ) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. Features Trench FS T... See More ⇒

6.1. Size:172K crhj
bt25t120anf.pdf pdf_icon

Silicon FS Planar IGBT R BT25T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 312 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.9 V Features Trench FS Technology, Positive temperature coef... See More ⇒

6.2. Size:170K wuxi china
bt25t120anf.pdf pdf_icon