BT40T120CKF Datasheet and Replacement
Type Designator: BT40T120CKF
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 278 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 54 nS
Coesⓘ - Output Capacitance, typ: 170 pF
Package: TO247
BT40T120CKF substitution
BT40T120CKF Datasheet (PDF)
bt40t120ckf.pdf
R BT40T120 CKF BT40T120 CKF VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ;
bt40t120ckf.pdf
R BT40T120 CKF BT40T120 CKF VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ;
bt40t60anf.pdf
R BT40T60 ANF BT40T60 ANF FS IGBT VCES 600 V IC 40 A RoHS Ptot TC=25 280 W VCE(sat) 1.8 V TO-3PN FS
Datasheet: RGT50NL65D , RGT50NS65D , RGT80TS65DGC13 , RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR , GT30F125 , BT50T60ANFK , BT60T60ANFK , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT .
History: SGT10T60SDM1P7 | GT40QR21 | NGTG15N120FL2 | IXGH32N90B2D1 | TGAN40N65F2DR | DIM400DDM12-A | MPBC40N65EH
Keywords - BT40T120CKF transistor datasheet
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History: SGT10T60SDM1P7 | GT40QR21 | NGTG15N120FL2 | IXGH32N90B2D1 | TGAN40N65F2DR | DIM400DDM12-A | MPBC40N65EH
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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