BT40T120CKF IGBT. Datasheet pdf. Equivalent
Type Designator: BT40T120CKF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 278 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 54 nS
Coesⓘ - Output Capacitance, typ: 170 pF
Qgⓘ - Total Gate Charge, typ: 239 nC
Package: TO247
BT40T120CKF Transistor Equivalent Substitute - IGBT Cross-Reference Search
BT40T120CKF Datasheet (PDF)
bt40t120ckf.pdf
R BT40T120 CKF BT40T120 CKF VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ;
bt40t120ckf.pdf
R BT40T120 CKF BT40T120 CKF VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ;
bt40t60anf.pdf
R BT40T60 ANF BT40T60 ANF FS IGBT VCES 600 V IC 40 A RoHS Ptot TC=25 280 W VCE(sat) 1.8 V TO-3PN FS
Datasheet: RGT50NL65D , RGT50NS65D , RGT80TS65DGC13 , RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR , RJH3047 , BT50T60ANFK , BT60T60ANFK , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2