BT40T120CKF Specs and Replacement
Type Designator: BT40T120CKF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 278 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 54 nS
Coesⓘ - Output Capacitance, typ: 170 pF
Package: TO247
BT40T120CKF Substitution - IGBTⓘ Cross-Reference Search
BT40T120CKF datasheet
bt40t120ckf.pdf
R BT40T120 CKF BT40T120 CKF VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ; ... See More ⇒
bt40t60anf.pdf
R BT40T60 ANF BT40T60 ANF FS IGBT VCES 600 V IC 40 A RoHS Ptot TC=25 280 W VCE(sat) 1.8 V TO-3P N FS ... See More ⇒
Specs: RGT50NL65D, RGT50NS65D, RGT80TS65DGC13, RGTH60TS65DGC13, BT15T120CNR, BT15T60A8F, BT15T60A9F, BT25T120CKR, GT30F131, BT50T60ANFK, BT60T60ANFK, DGTD120T25S1PT, DGTD120T40S1PT, DGTD65T15H2TF, DGTD65T40S2PT, DGTD65T50S1PT, DGTD65T60S2PT
Keywords - BT40T120CKF transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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