DGTD65T50S1PT IGBT. Datasheet pdf. Equivalent
Type Designator: DGTD65T50S1PT
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 375
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 100
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.2
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 60
Collector Capacity (Cc), typ, pF: 238
Total Gate Charge (Qg), typ, nC: 287
Package: TO247
DGTD65T50S1PT Transistor Equivalent Substitute - IGBT Cross-Reference Search
DGTD65T50S1PT Datasheet (PDF)
dgtd65t50s1pt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DGTD65T50S1PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T50S1PT is produced using advanced Field Stop Trench High-Speed Switching & Low Power Loss IGBT Technology, which provides excellent quality and high-switching VCE(sat) = 1.85V @ IC = 50A performance. High Input Impedance trr = 80ns (typ) @ diF/dt = 1000A/s Eoff = 0.55mJ @ TC=25C
dgtd65t40s2pt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DGTD65T40S2PT Green650V FIELD STOP IGBT IN TO247 (Type MC) Description Features The DGTD65T40S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss IGBT Technology, which provides excellent quality and high switching VCE(SAT) = 1.8V @ IC = 40A performance. tRR = 60ns (Typ) @ diF/dt = 820A/s C EOFF = 0.4mJ @ TC = +25 Ma
dgtd65t15h2tf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DGTD65T15H2TF Green650V FIELD STOP IGBT IN ITO220AB Description Features The DGTD65T15H2TF is produced using advanced Field Stop Trench High Ruggedness for Motor Control IGBT Technology, which provides high-performance, excellent quality, VCE(sat) Positive Temperature Coefficient and high ruggedness. Very Soft, Fast Recovery Anti-Parallel Diode Low EMI Maxi
dgtd65t60s2pt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T60S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss IGBT 2nd Generation Technology, which not only gives high-switching VCE(sat) = 1.85V @ IC = 60A efficiency, but is also extremely rugged and excellent quality for High Input Impedance applications where low
Datasheet: BT25T120CKR , BT40T120CKF , BT50T60ANFK , BT60T60ANFK , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , JT075N065WED , DGTD65T60S2PT , KGF40N65KDC , KGF75N65KDF , LEGM200BA120L2H , LEGM200BH120L2K , LEGM25BE120E2H , LEGM300BH120L2K , LEGM75BE120L5H .
![DGTD65T50S1PT](https://alltransistors.com/images/us.png)
![DGTD65T50S1PT](https://alltransistors.com/images/es.png)
![DGTD65T50S1PT](https://alltransistors.com/images/ru.png)
LIST
Last Update
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ