All IGBT. DGTD65T50S1PT Datasheet

 

DGTD65T50S1PT IGBT. Datasheet pdf. Equivalent


   Type Designator: DGTD65T50S1PT
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 238 pF
   Qgⓘ - Total Gate Charge, typ: 287 nC
   Package: TO247

 DGTD65T50S1PT Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGTD65T50S1PT Datasheet (PDF)

 ..1. Size:1639K  diodes
 dgtd65t50s1pt.pdf

DGTD65T50S1PT DGTD65T50S1PT

DGTD65T50S1PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T50S1PT is produced using advanced Field Stop Trench High-Speed Switching & Low Power Loss IGBT Technology, which provides excellent quality and high-switching VCE(sat) = 1.85V @ IC = 50A performance. High Input Impedance trr = 80ns (typ) @ diF/dt = 1000A/s Eoff = 0.55mJ @ TC=25C

 7.1. Size:1340K  diodes
 dgtd65t40s2pt.pdf

DGTD65T50S1PT DGTD65T50S1PT

DGTD65T40S2PT Green650V FIELD STOP IGBT IN TO247 (Type MC) Description Features The DGTD65T40S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss IGBT Technology, which provides excellent quality and high switching VCE(SAT) = 1.8V @ IC = 40A performance. tRR = 60ns (Typ) @ diF/dt = 820A/s C EOFF = 0.4mJ @ TC = +25 Ma

 7.2. Size:1787K  diodes
 dgtd65t15h2tf.pdf

DGTD65T50S1PT DGTD65T50S1PT

DGTD65T15H2TF Green650V FIELD STOP IGBT IN ITO220AB Description Features The DGTD65T15H2TF is produced using advanced Field Stop Trench High Ruggedness for Motor Control IGBT Technology, which provides high-performance, excellent quality, VCE(sat) Positive Temperature Coefficient and high ruggedness. Very Soft, Fast Recovery Anti-Parallel Diode Low EMI Maxi

 7.3. Size:1584K  diodes
 dgtd65t60s2pt.pdf

DGTD65T50S1PT DGTD65T50S1PT

DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T60S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss IGBT 2nd Generation Technology, which not only gives high-switching VCE(sat) = 1.85V @ IC = 60A efficiency, but is also extremely rugged and excellent quality for High Input Impedance applications where low

Datasheet: BT25T120CKR , BT40T120CKF , BT50T60ANFK , BT60T60ANFK , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , FGH75T65UPD , DGTD65T60S2PT , KGF40N65KDC , KGF75N65KDF , LEGM200BA120L2H , LEGM200BH120L2K , LEGM25BE120E2H , LEGM300BH120L2K , LEGM75BE120L5H .

 

 
Back to Top