DGTD65T50S1PT Datasheet. Specs and Replacement

Type Designator: DGTD65T50S1PT  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 375 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 238 pF

Package: TO247

  📄📄 Copy 

 DGTD65T50S1PT Substitution

- IGBTⓘ Cross-Reference Search

 

DGTD65T50S1PT datasheet

 ..1. Size:1639K  diodes
 dgtd65t50s1pt.pdf pdf_icon

DGTD65T50S1PT

DGTD65T50S1PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T50S1PT is produced using advanced Field Stop Trench High-Speed Switching & Low Power Loss IGBT Technology, which provides excellent quality and high-switching VCE(sat) = 1.85V @ IC = 50A performance. High Input Impedance trr = 80ns (typ) @ diF/dt = 1000A/ s Eoff = 0.55mJ @ TC=25 C ... See More ⇒

 7.1. Size:1340K  diodes
 dgtd65t40s2pt.pdf pdf_icon

DGTD65T50S1PT

DGTD65T40S2PT Green 650V FIELD STOP IGBT IN TO247 (Type MC) Description Features The DGTD65T40S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss IGBT Technology, which provides excellent quality and high switching VCE(SAT) = 1.8V @ IC = 40A performance. tRR = 60ns (Typ) @ diF/dt = 820A/ s C EOFF = 0.4mJ @ TC = +25 Ma... See More ⇒

 7.2. Size:1787K  diodes
 dgtd65t15h2tf.pdf pdf_icon

DGTD65T50S1PT

DGTD65T15H2TF Green 650V FIELD STOP IGBT IN ITO220AB Description Features The DGTD65T15H2TF is produced using advanced Field Stop Trench High Ruggedness for Motor Control IGBT Technology, which provides high-performance, excellent quality, VCE(sat) Positive Temperature Coefficient and high ruggedness. Very Soft, Fast Recovery Anti-Parallel Diode Low EMI Maxi... See More ⇒

 7.3. Size:1584K  diodes
 dgtd65t60s2pt.pdf pdf_icon

DGTD65T50S1PT

DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T60S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss IGBT 2nd Generation Technology, which not only gives high-switching VCE(sat) = 1.85V @ IC = 60A efficiency, but is also extremely rugged and excellent quality for High Input Impedance applications where low... See More ⇒

SHOW MORE

Specs: BT25T120CKR, BT40T120CKF, BT50T60ANFK, BT60T60ANFK, DGTD120T25S1PT, DGTD120T40S1PT, DGTD65T15H2TF, DGTD65T40S2PT, SGP30N60, DGTD65T60S2PT, KGF40N65KDC, KGF75N65KDF, LEGM200BA120L2H, LEGM200BH120L2K, LEGM25BE120E2H, LEGM300BH120L2K, LEGM75BE120L5H

Keywords - DGTD65T50S1PT transistor spec

 DGTD65T50S1PT cross reference
 DGTD65T50S1PT equivalent finder
 DGTD65T50S1PT lookup
 DGTD65T50S1PT substitution
 DGTD65T50S1PT replacement