LEGM75TD120E2H Datasheet and Replacement
Type Designator: LEGM75TD120E2H
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.78 V @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
tr ⓘ - Rise Time, typ: 35 nS
Package: MODULE
LEGM75TD120E2H substitution
LEGM75TD120E2H Datasheet (PDF)
legm75td120e2h.pdf

Mar.2020 LEGM75TD120E2H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit E2 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame
legm75be120l5h.pdf

Mar.2020 LEGM75BE120L5H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame
legm75bf120l5h.pdf

Mar.2020 LEGM75BF120L5H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame
Datasheet: KGF40N65KDC , KGF75N65KDF , LEGM200BA120L2H , LEGM200BH120L2K , LEGM25BE120E2H , LEGM300BH120L2K , LEGM75BE120L5H , LEGM75BF120L5H , GT30J122 , KWBW60N65F4EG , KWFFP10R12NS3 , KWGFP25R12NS3 , KWMFP40R12NS3 , KWRFF100R12SWM , KWRFF40R12SWM , KWRFF50R12SWM , KWRFF75R12SWM .
History: TT040U065FB | IXXK160N65C4
Keywords - LEGM75TD120E2H transistor datasheet
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History: TT040U065FB | IXXK160N65C4



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