LEGM75TD120E2H IGBT. Datasheet pdf. Equivalent
Type Designator: LEGM75TD120E2H
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.78 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.8(typ) V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 35 nS
Package: MODULE
LEGM75TD120E2H Transistor Equivalent Substitute - IGBT Cross-Reference Search
LEGM75TD120E2H Datasheet (PDF)
legm75td120e2h.pdf
Mar.2020 LEGM75TD120E2H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit E2 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame
legm75be120l5h.pdf
Mar.2020 LEGM75BE120L5H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame
legm75bf120l5h.pdf
Mar.2020 LEGM75BF120L5H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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