KWGFP25R12NS3 Datasheet and Replacement
Type Designator: KWGFP25R12NS3
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 156 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 103 nS
Coesⓘ - Output Capacitance, typ: 125 pF
Package: MODULE
KWGFP25R12NS3 substitution
KWGFP25R12NS3 Datasheet (PDF)
kwgfp25r12ns3.pdf
KWGFP25R12NS31200V 25A PIM IGBTNTC100% RBSOA(2*IC)(VCE=2.0V)(Eoff=1.22mJ)(>10us) IGBT()T =25j
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MG12300D-BA1MM
Keywords - KWGFP25R12NS3 transistor datasheet
KWGFP25R12NS3 cross reference
KWGFP25R12NS3 equivalent finder
KWGFP25R12NS3 lookup
KWGFP25R12NS3 substitution
KWGFP25R12NS3 replacement
History: MG12300D-BA1MM
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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