KWGFP25R12NS3 Specs and Replacement
Type Designator: KWGFP25R12NS3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 156 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 103 nS
Coesⓘ - Output Capacitance, typ: 125 pF
Package: MODULE KWGFP25R12NS3 Substitution - IGBTⓘ Cross-Reference Search
KWGFP25R12NS3 datasheet
Specs: LEGM200BH120L2K, LEGM25BE120E2H, LEGM300BH120L2K, LEGM75BE120L5H, LEGM75BF120L5H, LEGM75TD120E2H, KWBW60N65F4EG, KWFFP10R12NS3, STGW60V60DF, KWMFP40R12NS3, KWRFF100R12SWM, KWRFF40R12SWM, KWRFF50R12SWM, KWRFF75R12SWM, MG100HF12MIC1, MG100HF12MRC1, MG100UZ12MRGJ
Keywords - KWGFP25R12NS3 transistor spec
KWGFP25R12NS3 cross reference
KWGFP25R12NS3 equivalent finder
KWGFP25R12NS3 lookup
KWGFP25R12NS3 substitution
KWGFP25R12NS3 replacement
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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