CRG40T60AN3HD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

CRG40T60AN3HD Specs and Replacement

Type Designator: CRG40T60AN3HD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 336 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 62 nS

Coesⓘ - Output Capacitance, typ: 141 pF

Package: TO3PN

CRG40T60AN3HD Substitution

- IGBT ⓘ Cross-Reference Search

CRG40T60AN3HD datasheet

..1. Size:1182K crhj
crg40t60an3hd crg40t60ak3hd.pdf pdf_icon

... See More ⇒

2.1. Size:879K crhj
crg40t60an3h.pdf pdf_icon

CRG40T60AN3H CRG40T60AN3H FS IGBT VCES 600 V IC 40 A RoHS Ptot TC=25 280 W VCE(sat) 1.9 V TO-3P N FS VCE(sat... See More ⇒

2.2. Size:1115K wuxi china
crg40t60an3h.pdf pdf_icon

Silicon FS Trench IGBT CRG40T60AN3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25 VCE(sat) 1.9 V performances. RoHS Compliant. TO- 3PN Features FS Trench Technology, Positive temperature coefficient Low saturati... See More ⇒

5.1. Size:998K wuxi china
crg40t60ak3sd.pdf pdf_icon

CRG40T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25 VCE(sat) 1.7 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low sat... See More ⇒