All IGBT. CRG40T60AN3HD Datasheet

 

CRG40T60AN3HD IGBT. Datasheet pdf. Equivalent


   Type Designator: CRG40T60AN3HD
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 336
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 62
   Collector Capacity (Cc), typ, pF: 141
   Package: TO3PN

 CRG40T60AN3HD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CRG40T60AN3HD Datasheet (PDF)

 ..1. Size:1182K  crhj
 crg40t60an3hd crg40t60ak3hd.pdf

CRG40T60AN3HD CRG40T60AN3HD

CRG40T60AN3HD, CRG40T60AK3HD CRG40T60AN3HD CRG40T60AK3HD VCES 600 V FS IGBT IC 40 A RoHS Ptot TC=25 336 W VCE(sat) 1.9 V TO-3PN FS

 2.1. Size:879K  crhj
 crg40t60an3h.pdf

CRG40T60AN3HD CRG40T60AN3HD

CRG40T60AN3H CRG40T60AN3H FS IGBT VCES 600 V IC 40 A RoHS Ptot TC=25 280 W VCE(sat) 1.9 V TO-3PN FS VCE(sat

 2.2. Size:1115K  wuxi china
 crg40t60an3h.pdf

CRG40T60AN3HD CRG40T60AN3HD

Silicon FS Trench IGBT CRG40T60AN3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO- 3PN Features FS Trench Technology, Positive temperature coefficient Low saturati

 5.1. Size:998K  wuxi china
 crg40t60ak3sd.pdf

CRG40T60AN3HD CRG40T60AN3HD

CRG40T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25VCE(sat) 1.7 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low sat

 5.2. Size:1086K  wuxi china
 crg40t60ak3hd.pdf

CRG40T60AN3HD CRG40T60AN3HD

Silicon FS Trench IGBT CRG40T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 336 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

 5.3. Size:1116K  wuxi china
 crg40t60ak3h.pdf

CRG40T60AN3HD CRG40T60AN3HD

Silicon FS Trench IGBT CRG40T60AK3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO- 247 Features FS Trench Technology, Positive temperature coefficient Low saturati

Datasheet: MSG50T120FQW , MSG75T120FQC1 , MSG75T120FQW , MSG75T65FQC , CRG25T120BK3S , CRG40T120AK3S , CRG40T120AK3SD , CRG40T60AN3H , IHW20N120R3 , CRG40T60AK3HD , CRG40T65AK5H , CRG40T65AN5H , CRG40T65AK5HD , CRG40T65AN5HD , CRG60T60AK3HD , CRG75T60AK3HD , CRG75T65AK5HD .

 

 
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