All IGBT. SPT50N65F1A1 Datasheet

 

SPT50N65F1A1 Datasheet and Replacement


   Type Designator: SPT50N65F1A1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qg ⓘ - Total Gate Charge, typ: 162 nC
   Package: TO247
 

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SPT50N65F1A1 Datasheet (PDF)

 ..1. Size:1793K  cn sptech
 spt50n65f1a1.pdf pdf_icon

SPT50N65F1A1

SPT50N65F1A1 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

 0.1. Size:5480K  cn sps
 spt50n65f1a1t8tl.pdf pdf_icon

SPT50N65F1A1

SPT50N65F1A1T8TL650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering

 3.1. Size:5494K  cn sps
 spt50n65f1at8tl.pdf pdf_icon

SPT50N65F1A1

SPT50N65F1AT8TL650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

 3.2. Size:1808K  cn sptech
 spt50n65f1a.pdf pdf_icon

SPT50N65F1A1

SPT50N65F1A 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: AOGF60B65H2AL

Keywords - SPT50N65F1A1 transistor datasheet

 SPT50N65F1A1 cross reference
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