All IGBT. SPT15N120T1T8TL Datasheet

 

SPT15N120T1T8TL Datasheet and Replacement


   Type Designator: SPT15N120T1T8TL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 21 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Qg ⓘ - Total Gate Charge, typ: 137 nC
   Package: TO247
 

 SPT15N120T1T8TL substitution

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SPT15N120T1T8TL Datasheet (PDF)

 0.1. Size:9545K  cn sps
spt15n120t1t8tl.pdf pdf_icon

SPT15N120T1T8TL

SPT15N120T1T8TL1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature s

 3.1. Size:1120K  cn sptech
spt15n120t1.pdf pdf_icon

SPT15N120T1T8TL

SPT15N120T1 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature stab

 5.1. Size:3565K  cn sps
spt15n120f1t8tl.pdf pdf_icon

SPT15N120T1T8TL

SPT15N120F1T8TL1200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High ruggednes

 5.2. Size:1266K  cn sptech
spt15n120f1.pdf pdf_icon

SPT15N120T1T8TL

SPT15N120F11200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High ruggedness, t

Datasheet: SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL , SPF15N65T1T1TL , SPF15N65T1T2TL , SPT10N120T1T8TL , SPT15N120F1T8TL , SGP30N60 , SPT25N120F1 , SPT25N120F1A1T8TL , SPT25N120T1T8TL , SPT25N120U1T8TL , SPT25N135F1AT8TL , SPT40N120F1A1T8TL , SPT40N120F1AT8TL , SPT40N120F1CT8TL .

History: IXSH20N60U1 | IXGN50N60B

Keywords - SPT15N120T1T8TL transistor datasheet

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