All IGBT. SPT25N120U1T8TL Datasheet

 

SPT25N120U1T8TL IGBT. Datasheet pdf. Equivalent


   Type Designator: SPT25N120U1T8TL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 210
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.05
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 22
   Collector Capacity (Cc), typ, pF: 70
   Total Gate Charge (Qg), typ, nC: 137
   Package: TO247

 SPT25N120U1T8TL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPT25N120U1T8TL Datasheet (PDF)

 0.1. Size:5254K  cn sps
 spt25n120u1t8tl.pdf

SPT25N120U1T8TL SPT25N120U1T8TL

SPT25N120U1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 3.1. Size:1562K  cn sptech
 spt25n120u1.pdf

SPT25N120U1T8TL SPT25N120U1T8TL

SPT25N120U11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

 5.1. Size:5495K  cn sps
 spt25n120f1.pdf

SPT25N120U1T8TL SPT25N120U1T8TL

SPT25N120F11200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 20 A Cimproved reliabilityV I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 5.2. Size:4778K  cn sps
 spt25n120f1a1t8tl.pdf

SPT25N120U1T8TL SPT25N120U1T8TL

SPT25N120F1A1T8TL1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat En

 5.3. Size:5580K  cn sps
 spt25n120t1t8tl.pdf

SPT25N120U1T8TL SPT25N120U1T8TL

SPT25N120T1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel sw

 5.4. Size:1545K  cn sptech
 spt25n120f1a1.pdf

SPT25N120U1T8TL SPT25N120U1T8TL

SPT25N120F1A11200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat Enhanc

 5.5. Size:1896K  cn sptech
 spt25n120t1.pdf

SPT25N120U1T8TL SPT25N120U1T8TL

SPT25N120T11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel switch

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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