SPT25N135F1AT8TL PDF and Equivalents Search

 

SPT25N135F1AT8TL Specs and Replacement

Type Designator: SPT25N135F1AT8TL

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO247

 SPT25N135F1AT8TL Substitution

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SPT25N135F1AT8TL datasheet

 0.1. Size:5360K  cn sps
spt25n135f1at8tl.pdf pdf_icon

SPT25N135F1AT8TL

SPT25N135F1AT8TL 1350V /25A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1350 V CE switching losses, high energy efficiency and I 25 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) C microwave oven, etc. FEATURES High breakdown voltage to 1350V for improved reliability Trench-Stop Tec... See More ⇒

 2.1. Size:1676K  cn sptech
spt25n135f1a.pdf pdf_icon

SPT25N135F1AT8TL

SPT25N135F1A 1350V /25A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1350 V CE switching losses, high energy efficiency and I 25 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) C microwave oven, etc. FEATURES High breakdown voltage to 1350V for improved reliability Trench-Stop Technol... See More ⇒

 7.1. Size:5254K  cn sps
spt25n120u1t8tl.pdf pdf_icon

SPT25N135F1AT8TL

SPT25N120U1T8TL 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due t... See More ⇒

 7.2. Size:5495K  cn sps
spt25n120f1.pdf pdf_icon

SPT25N135F1AT8TL

SPT25N120F1 1200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 20 A C improved reliability V I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable ... See More ⇒

Specs: SPF15N65T1T2TL , SPT10N120T1T8TL , SPT15N120F1T8TL , SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL , SPT25N120T1T8TL , SPT25N120U1T8TL , FGH75T65UPD , SPT40N120F1A1T8TL , SPT40N120F1AT8TL , SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL .

History: NGTB15N120LWG

Keywords - SPT25N135F1AT8TL transistor spec

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History: NGTB15N120LWG

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