All IGBT. SPT50N65F1A1T8TL Datasheet

 

SPT50N65F1A1T8TL IGBT. Datasheet pdf. Equivalent


   Type Designator: SPT50N65F1A1T8TL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 260
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 55
   Collector Capacity (Cc), typ, pF: 130
   Total Gate Charge (Qg), typ, nC: 162
   Package: TO247

 SPT50N65F1A1T8TL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPT50N65F1A1T8TL Datasheet (PDF)

 0.1. Size:5480K  cn sps
 spt50n65f1a1t8tl.pdf

SPT50N65F1A1T8TL SPT50N65F1A1T8TL

SPT50N65F1A1T8TL650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering

 2.1. Size:1793K  cn sptech
 spt50n65f1a1.pdf

SPT50N65F1A1T8TL SPT50N65F1A1T8TL

SPT50N65F1A1 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

 3.1. Size:5494K  cn sps
 spt50n65f1at8tl.pdf

SPT50N65F1A1T8TL SPT50N65F1A1T8TL

SPT50N65F1AT8TL650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

 3.2. Size:1808K  cn sptech
 spt50n65f1a.pdf

SPT50N65F1A1T8TL SPT50N65F1A1T8TL

SPT50N65F1A 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

Datasheet: SPT25N120T1T8TL , SPT25N120U1T8TL , SPT25N135F1AT8TL , SPT40N120F1A1T8TL , SPT40N120F1AT8TL , SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , CRG75T60AK3HD , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T , XNG100B24TC1S5 , XNS25N120T , XNS40N120T , XD015H060CX1S3 , XD015H120CX1 .

 

 
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