XD050H065CX1S3 IGBT. Datasheet pdf. Equivalent
Type Designator: XD050H065CX1S3
Type: IGBT + Anti-Parallel Diode
Marking Code: D50H65CX1
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 385 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 58 nS
Coesⓘ - Output Capacitance, typ: 398 pF
Qgⓘ - Total Gate Charge, typ: 115 nC
Package: TO247
XD050H065CX1S3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
XD050H065CX1S3 Datasheet (PDF)
xd050h065cx1s3.pdf
XD050H065CX1S3 Trench Field-Stop Technology IGBT Features 650V, 50A V =1.55V@V =15V, I =50A CE(sat)(typ.) GE C Maximum Junction Temperature 175 Pb-free Lead Plating; RoHS Compliant Applications Solar Converters Uninterrupted Power Supply Welding Converters Mid to High Range Switching Frequency Converters Key Performance and Package Par
xd050h120cx1s4.pdf
XD050H120CX1S4 Trench Field-Stop Technology IGBT Features 1200V, 50A V =1.85V@V =15V, I =50A CE(sat)(typ.) GE C Low Switching Losses V with Positive Temperature Coefficient CE(sat) Pb-free Lead Plating; RoHS Compliant Applications Frequency Converters Uninterrupted Power Supply Air Conditioning Motor Drives Key Performance and Pac
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