SGT50T65FD1PS IGBT. Datasheet pdf. Equivalent

   Type Designator: SGT50T65FD1PS
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 50T65D1
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 235 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 145 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Qgⓘ - Total Gate Charge, typ: 145 nC
   Package: TO247S

 SGT50T65FD1PS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGT50T65FD1PS Datasheet (PDF)

Datasheet: SGT20T60SDM1P7 , SGT25T120FD1P7 , SGT25U120FD1P7 , SGT40N60FD2PN , SGT40N60FD2P7 , SGT40N60NPFDPN , SGT50T65FD1PN , SGT50T65FD1P7 , FGA25N120ANTD , SGT50T65FD1PT , SGTP5T60SD1D , SGTP5T60SD1F , SGTP5T60SD1S , AU40N120T3A2 , LGM100HF120S2F1A , LGM400HF65S4T1A , YGF15N65T2 .

 

 

 

     

 

LIST

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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2