SGT50T65FD1PS Datasheet. Specs and Replacement

Type Designator: SGT50T65FD1PS  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 235 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 145 nS

Coesⓘ - Output Capacitance, typ: 90 pF

Package: TO247S

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SGT50T65FD1PS datasheet

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SGT50T65FD1PS

SGT50T65FD1PN/P7 50A 650V C 2 SGT50T65FD1PN/P7 1 Field Stop IV G UPS,SMPS PFC 3 E 50A 650V VCE(sat)( )=2.0... See More ⇒

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SGT50T65FD1PS

SGT50T65SDM1P7 50A 650V C 2 SGT50T65SDM1P7 1 Field Stop III G UPS SMPS PFC 3 E 50A 650V VCE(sat)( )=1.65V@IC=50A ... See More ⇒

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Specs: SGT20T60SDM1P7, SGT25T120FD1P7, SGT25U120FD1P7, SGT40N60FD2PN, SGT40N60FD2P7, SGT40N60NPFDPN, SGT50T65FD1PN, SGT50T65FD1P7, FGA25N120ANTD, SGT50T65FD1PT, SGTP5T60SD1D, SGTP5T60SD1F, SGTP5T60SD1S, AU40N120T3A2, LGM100HF120S2F1A, LGM400HF65S4T1A, YGF15N65T2

Keywords - SGT50T65FD1PS transistor spec

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