SGT50T65FD1PS IGBT. Datasheet pdf. Equivalent

   Type Designator: SGT50T65FD1PS
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 50T65D1
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 235 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 145 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Qgⓘ - Total Gate Charge, typ: 145 nC
   Package: TO247S

 SGT50T65FD1PS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGT50T65FD1PS Datasheet (PDF)

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 

 

     

 

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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2