SGT50T65FD1PT Datasheet and Replacement

   Type Designator: SGT50T65FD1PT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 235 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 145 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Package: TO3PN
      - IGBT Cross-Reference