SGT50T65FD1PT PDF and Equivalents Search

 

SGT50T65FD1PT Specs and Replacement

The SGT50T65FD1PT is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for efficient power switching in industrial and automotive applications. Rated at 650V and 100A, it combines low conduction and switching losses with robust thermal performance. Its fast switching capability minimizes energy dissipation, making it suitable for inverters, motor drives, UPS systems. The device features advanced planar trench gate technology, ensuring high reliability under harsh operating conditions. Compact in TO3PN package, it offers excellent thermal conductivity and ease of mounting. With short-circuit ruggedness and low EMI characteristics, the SGT50T65FD1PT optimizes power efficiency and system longevity.

   Type Designator: SGT50T65FD1PT
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 235 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   tr ⓘ - Rise Time, typ: 145 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Package: TO3PN
     - IGBT ⓘ Cross-Reference Search