IXGT32N60B PDF and Equivalents Search

 

IXGT32N60B Specs and Replacement

Type Designator: IXGT32N60B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 210 pF

Package: TO268

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IXGT32N60B datasheet

 ..1. Size:125K  ixys
ixgt32n60b.pdf pdf_icon

IXGT32N60B

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25 C to 150 C 600 V E C VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) VGES Continuous 20 V TO-247 AD VGEM Transient 30 V (IXGH) IC25 TC = 25 C60 A IC90 TC = 90 C3... See More ⇒

 0.1. Size:125K  ixys
ixgt32n60bd1.pdf pdf_icon

IXGT32N60B

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25 C to 150 C 600 V E C VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) VGES Continuous 20 V TO-247 AD VGEM Transient 30 V (IXGH) IC25 TC = 25 C60 A IC90 TC = 90 C3... See More ⇒

 5.1. Size:81K  ixys
ixgt32n60c.pdf pdf_icon

IXGT32N60B

IXGH 32N60C VCES = 600 V HiPerFASTTM IGBT IXGT 32N60C IC25 = 60 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 55 ns TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C60 A TO-247 AD (IXGH) IC110 TC = 110 C32 A ICM TC = ... See More ⇒

 5.2. Size:163K  ixys
ixgt32n60cd1.pdf pdf_icon

IXGT32N60B

IXGH 32N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 32N60CD1 IC25 = 60 A with Diode VCE(SAT)typ = 2.1 V tfi(typ) = 55 ns Light Speed Series TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G VGES Continuous 20 V C (TAB) C VGEM Transient 30 V E IC25 TC = 25 C60 A IC90 TC = 90 C32 A TO-268 (D... See More ⇒

Specs: IXGA20N60B , IXGA7N60B , IXGA7N60C , IXGA8N100 , IXGH32N60AU1S , IXGH40N30AS , IXGH40N30BS , IXGH50N60AS , KGF75N65KDF , IXSM25N100 , IXSM25N100A , IXGH10N100U1 , IXGH10N100 , IXGH10N100A , IXGH10N100AU1 , IXGH12N100 , IXGH12N100A .

History: IRG4PC30W | IRG4PC30U

Keywords - IXGT32N60B transistor spec

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History: IRG4PC30W | IRG4PC30U

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