All IGBT. YGK20N65T2 Datasheet

 

YGK20N65T2 IGBT. Datasheet pdf. Equivalent


   Type Designator: YGK20N65T2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 125
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 40
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 40
   Collector Capacity (Cc), typ, pF: 50
   Total Gate Charge (Qg), typ, nC: 45
   Package: TO263

 YGK20N65T2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGK20N65T2 Datasheet (PDF)

 ..1. Size:601K  cn luxin semi
 ygf20n65t2 ygk20n65t2 ygp20n65t2 ygw20n65t2.pdf

YGK20N65T2 YGK20N65T2

YGF20N65T2,YGK20N65T2YGP20N65T2,YGW20N65T2 650V /20A Trench Field Stop IGBT Features Max Junction Temperature 175C V 650 V CE High breakdown voltage up to 650V for improved reliability I 20 A C Short Circuit Rated V I =20A 1.65 V CE(SAT) C Very Low Saturation Voltage: V = 1.65V (Typ.) @ I = 20A CE(SAT) C Soft current turn-off waveforms App

Datasheet: SGTP5T60SD1S , AU40N120T3A2 , LGM100HF120S2F1A , LGM400HF65S4T1A , YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , RJH30E2DPP , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP , YGW10N120T3 , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 .

 

 
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