All IGBT. YGW15N120T3 Datasheet

 

YGW15N120T3 IGBT. Datasheet pdf. Equivalent


   Type Designator: YGW15N120T3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 190
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 30
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 30
   Collector Capacity (Cc), typ, pF: 70
   Total Gate Charge (Qg), typ, nC: 115
   Package: TO247

 YGW15N120T3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGW15N120T3 Datasheet (PDF)

 ..1. Size:408K  cn luxin semi
 ygw15n120t3.pdf

YGW15N120T3 YGW15N120T3

YGW15N120T3 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution Short circuit withstand time 10s High ruggedness, temperature stable Low V CE(SAT) Easy parallel switching

 5.1. Size:481K  cn luxin semi
 ygw15n120f1a.pdf

YGW15N120T3 YGW15N120T3

YGW15N120F1A 1200V /15A Trench Field Stop IGBT Lu-semi Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High r

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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