All IGBT. YGW15N120T3 Datasheet

 

YGW15N120T3 Datasheet and Replacement


   Type Designator: YGW15N120T3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 190 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Qg ⓘ - Total Gate Charge, typ: 115 nC
   Package: TO247
 

 YGW15N120T3 substitution

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YGW15N120T3 Datasheet (PDF)

 ..1. Size:408K  cn luxin semi
 ygw15n120t3.pdf pdf_icon

YGW15N120T3

YGW15N120T3 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution Short circuit withstand time 10s High ruggedness, temperature stable Low V CE(SAT) Easy parallel switching

 5.1. Size:481K  cn luxin semi
 ygw15n120f1a.pdf pdf_icon

YGW15N120T3

YGW15N120F1A 1200V /15A Trench Field Stop IGBT Lu-semi Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High r

Datasheet: YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP , YGW10N120T3 , YGW15N120F1A , SGT40N60FD2PN , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 .

History: NGTG30N60FLWG | IKB30N65ES5 | TA49017 | MMG50HD120XT6TC | 2M410B1 | IXSH30N60 | OST50N65H4EWF

Keywords - YGW15N120T3 transistor datasheet

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