IXSM25N100A Specs and Replacement
Type Designator: IXSM25N100A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4(max) V @25℃
tr ⓘ - Rise Time, typ: 580 nS
Coesⓘ - Output Capacitance, typ: 210 pF
Package: TO204
IXSM25N100A Substitution - IGBT ⓘ Cross-Reference Search
IXSM25N100A datasheet
Specs: IXGA7N60C , IXGA8N100 , IXGH32N60AU1S , IXGH40N30AS , IXGH40N30BS , IXGH50N60AS , IXGT32N60B , IXSM25N100 , IRG7S313U , IXGH10N100U1 , IXGH10N100 , IXGH10N100A , IXGH10N100AU1 , IXGH12N100 , IXGH12N100A , IXGH12N100AU1 , IXGH12N100U1 .
Keywords - IXSM25N100A transistor spec
IXSM25N100A cross reference
IXSM25N100A equivalent finder
IXSM25N100A lookup
IXSM25N100A substitution
IXSM25N100A replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
2sc372 | 2sd400 datasheet | k2645 | tip3055 equivalent | 3sk73 | 13n10 mosfet | 2n3565 transistor | datasheet irfz44n