YGW40N120F2 PDF and Equivalents Search

 

YGW40N120F2 Specs and Replacement

Type Designator: YGW40N120F2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 417 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 180 pF

Package: TO247

 YGW40N120F2 Substitution

- IGBT ⓘ Cross-Reference Search

 

YGW40N120F2 datasheet

 ..1. Size:466K  cn luxin semi
ygw40n120f2.pdf pdf_icon

YGW40N120F2

YGW40N120F2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.8 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due... See More ⇒

 5.1. Size:527K  cn luxin semi
ygw40n120t2.pdf pdf_icon

YGW40N120F2

YGW40N120T2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution Short circuit withstand time 10 s High ruggedness, temperature stable Low V CE(SAT) Easy parallel switchin... See More ⇒

 5.2. Size:502K  cn luxin semi
ygw40n120t3.pdf pdf_icon

YGW40N120F2

YGW40N120T3 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy parall... See More ⇒

 8.1. Size:599K  1
ygw40n65f1.pdf pdf_icon

YGW40N120F2

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V ... See More ⇒

Specs: YGQ100N65FP , YGW10N120T3 , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW60N65F1A1 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 , YGW40N65F1A2 , YGW50N120FP , YGW50N65F1A , YGW50N65T1 , YGW60N65F1A2 .

History: TT040K120EQ | SGW13N60UF

Keywords - YGW40N120F2 transistor spec

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