All IGBT. YGW40N120F2 Datasheet

 

YGW40N120F2 Datasheet and Replacement


   Type Designator: YGW40N120F2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Package: TO247
 

 YGW40N120F2 substitution

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YGW40N120F2 Datasheet (PDF)

 ..1. Size:466K  cn luxin semi
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YGW40N120F2

YGW40N120F2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low V CEsat Easy parallel switching capability due

 5.1. Size:527K  cn luxin semi
ygw40n120t2.pdf pdf_icon

YGW40N120F2

YGW40N120T2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution Short circuit withstand time 10s High ruggedness, temperature stable Low V CE(SAT) Easy parallel switchin

 5.2. Size:502K  cn luxin semi
ygw40n120t3.pdf pdf_icon

YGW40N120F2

YGW40N120T3 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10s Low V CE(SAT) Easy parall

 8.1. Size:599K  1
ygw40n65f1.pdf pdf_icon

YGW40N120F2

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: STGB19NC60W | STGFW30H65FB | IRGR2B60KD | IGC99T120T8RM | STGWA60NC60WDR | IRG4BC20F | STGW30H60DF

Keywords - YGW40N120F2 transistor datasheet

 YGW40N120F2 cross reference
 YGW40N120F2 equivalent finder
 YGW40N120F2 lookup
 YGW40N120F2 substitution
 YGW40N120F2 replacement

 

 
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