YGW50N120FP IGBT. Datasheet pdf. Equivalent
Type Designator: YGW50N120FP
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 75 nS
Coesⓘ - Output Capacitance, typ: 210 pF
Package: TO247
YGW50N120FP Transistor Equivalent Substitute - IGBT Cross-Reference Search
YGW50N120FP Datasheet (PDF)
ygw50n120fp.pdf
YGW50N120FP 1200V /50A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 50 A Cimproved reliability V I =50A 1.65 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 8s Low V CEsat Easy parallel switching capability du
ygw50n65f1a.pdf
YGW50N65F1A 650V /50A Trench Field Stop IGBT FEATURES V CE 650 V High breakdown voltage up to 650V for I 50 A Cimproved reliability V I =50A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability du
ygw50n65t1.pdf
YGW50N65T1 650V /50A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 50 A Cimproved reliability V I =50A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due
Datasheet: YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 , YGW40N65F1A2 , SGH80N60UFD , YGW50N65F1A , YGW50N65T1 , YGW60N65F1A2 , YGW60N65T1 , YGW75N65F1 , YGW75N65FP , YGW75N65HP , YGW75N65T1 .
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