YGW50N120FP IGBT. Datasheet pdf. Equivalent
Type Designator: YGW50N120FP
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 75 nS
Coesⓘ - Output Capacitance, typ: 210 pF
Qgⓘ - Total Gate Charge, typ: 125 nC
Package: TO247
YGW50N120FP Transistor Equivalent Substitute - IGBT Cross-Reference Search
YGW50N120FP Datasheet (PDF)
ygw50n120fp.pdf
YGW50N120FP 1200V /50A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 50 A Cimproved reliability V I =50A 1.65 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 8s Low V CEsat Easy parallel switching capability du
ygw50n65f1a.pdf
YGW50N65F1A 650V /50A Trench Field Stop IGBT FEATURES V CE 650 V High breakdown voltage up to 650V for I 50 A Cimproved reliability V I =50A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability du
ygw50n65t1.pdf
YGW50N65T1 650V /50A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 50 A Cimproved reliability V I =50A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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