NCE07T60BI IGBT. Datasheet pdf. Equivalent
Type Designator: NCE07T60BI
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 73
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 30
Maximum Collector Current |Ic| @25℃, A: 14
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 15
Collector Capacity (Cc), typ, pF: 22
Total Gate Charge (Qg), typ, nC: 28
Package: TO251
NCE07T60BI Transistor Equivalent Substitute - IGBT Cross-Reference Search
NCE07T60BI Datasheet (PDF)
nce07t60bi.pdf
PbFreeProduct NCE07T60BI 600V, 7A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed swi
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PbFreeProduct NCE07TD60BF,NCE07TD60BD,NCE07TD60B 600V, 7A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce07td60bi nce07td60bk.pdf
PbFreeProduct NCE07TD60BI,NCE07TD60BK 600V, 7A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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