IXGH10N100 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXGH10N100 Specs and Replacement

Type Designator: IXGH10N100

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5(max) V @25℃

tr ⓘ - Rise Time, typ: 200 nS

Coesⓘ - Output Capacitance, typ: 150 pF

Package: TO247

IXGH10N100 Substitution

- IGBT ⓘ Cross-Reference Search

IXGH10N100 datasheet

..1. Size:34K ixys
ixgh10n100.pdf pdf_icon

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH 10 N100 1000 V 20 A 3.5 V High speed IGBT IXGH 10 N100A 1000 V 20 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C20 A G = Gate, C = Collector, IC90 TC = 90 C10 A E = Emitter, TAB = Col... See More ⇒

0.1. Size:413K ixys
ixgh10n100au1 ixgh10n100u1.pdf pdf_icon

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0.2. Size:34K ixys
ixgh10n100a.pdf pdf_icon

6.1. Size:565K ixys
ixgh10n170a ixgt10n170a.pdf pdf_icon

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C10 A TO-247 AD (IXGH) IC90 TC = 90 C5 A ICM ... See More ⇒