All IGBT. NCE10TD60BD Datasheet

 

NCE10TD60BD IGBT. Datasheet pdf. Equivalent


   Type Designator: NCE10TD60BD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 83
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 20
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 15
   Collector Capacity (Cc), typ, pF: 40
   Total Gate Charge (Qg), typ, nC: 44
   Package: TO263

 NCE10TD60BD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NCE10TD60BD Datasheet (PDF)

 ..1. Size:677K  ncepower
 nce10td60bf nce10td60bd nce10td60b.pdf

NCE10TD60BD NCE10TD60BD

PbFreeProduct NCE10TD60BF,NCE10TD60BD,NCE10TD60B 600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 4.1. Size:606K  ncepower
 nce10td60bk.pdf

NCE10TD60BD NCE10TD60BD

PbFreeProduct NCE10TD60BK 600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed s

 9.1. Size:281K  ncepower
 nce1013e.pdf

NCE10TD60BD NCE10TD60BD

http://www.ncepower.com NCE1013ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE1013E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V,ID =-0.66A RDS(ON)

 9.2. Size:694K  ncepower
 nce1012e.pdf

NCE10TD60BD NCE10TD60BD

http://www.ncepower.comNCE1012ENCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE1012E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 1.8V. This device is suitable for use as aBattery protection or in other Switching application.General Features V = 20V,I =0.6ADS DSchematic diagramR

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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