NCE20TD60BF Specs and Replacement
Type Designator: NCE20TD60BF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 34.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 48 pF
Package: TO220F
NCE20TD60BF Substitution - IGBT ⓘ Cross-Reference Search
NCE20TD60BF datasheet
nce20td60bp.pdf
PbFreeProduct NCE20TD60BT, NCE20TD60BP 600V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat ... See More ⇒
nce20td60bt.pdf
PbFreeProduct NCE20TD60BT, NCE20TD60BP 600V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat ... See More ⇒
Specs: NCE07TD60BK , NCE10TD60BF , NCE10TD60BD , NCE10TD60B , NCE10TD60BK , NCE15TD120BT , NCE20TD60BD , NCE20TD60B , MGD623S , NCE20TH60BP , NCE25GD135T , NCE25TD120BT , NCE25TD120LT , NCE25TD135LT , NCE30TD120UT , NCE30TD60B , NCE30TD60BF .
Keywords - NCE20TD60BF transistor spec
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