NCE25TD120LT IGBT. Datasheet pdf. Equivalent
Type Designator: NCE25TD120LT
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 365
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 30
Maximum Collector Current |Ic| @25℃, A: 50
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 17
Collector Capacity (Cc), typ, pF: 72
Total Gate Charge (Qg), typ, nC: 146
Package: TO247
NCE25TD120LT Transistor Equivalent Substitute - IGBT Cross-Reference Search
NCE25TD120LT Datasheet (PDF)
nce25td120lt.pdf
PbFreeProduct NCE25TD120LT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td120bt.pdf
PbFreeProduct NCE25TD120BT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td135lt.pdf
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nce25gd135t.pdf
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