NCE30TD60BT Specs and Replacement
Type Designator: NCE30TD60BT
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 183 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 106 pF
Package: TO3P
NCE30TD60BT Substitution - IGBTⓘ Cross-Reference Search
NCE30TD60BT datasheet
nce30td60bp nce30td60bt.pdf
PbFreeProduct NCE30TD60BP,NCE30TD60BT 600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H... See More ⇒
nce30td60bd.pdf
PbFreeProduct NCE30TD60BD 600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed ... See More ⇒
Specs: NCE25TD120BT, NCE25TD120LT, NCE25TD135LT, NCE30TD120UT, NCE30TD60B, NCE30TD60BF, NCE30TD60BD, NCE30TD60BP, FGL60N100BNTD, NCE30TH60BP, NCE40TD120BT, NCE40TD120VT, NCE40TD120VTP, NCE40TD120WT, NCE40TD60BP, NCE40TD60BT, NCE40TD65BT
Keywords - NCE30TD60BT transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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