All IGBT. NCE40TD65BT Datasheet

 

NCE40TD65BT Datasheet and Replacement


   Type Designator: NCE40TD65BT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 286 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 136 pF
   Package: TO247
      - IGBT Cross-Reference

 

NCE40TD65BT Datasheet (PDF)

 ..1. Size:389K  ncepower
 nce40td65bt.pdf pdf_icon

NCE40TD65BT

PbFreeProduct NCE40TD65BT 650V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High sp

 4.1. Size:1873K  ncepower
 nce40td65b.pdf pdf_icon

NCE40TD65BT

Pb Free ProductNCE40TD65B650V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 4.2. Size:1851K  ncepower
 nce40td65bp.pdf pdf_icon

NCE40TD65BT

Pb Free ProductNCE40TD65BP650V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 6.1. Size:1817K  ncepower
 nce40td60bp.pdf pdf_icon

NCE40TD65BT

Pb Free ProductNCE40TD60BP600V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

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History: MMG75J120U6HN | 2SH29

Keywords - NCE40TD65BT transistor datasheet

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