NCE40TD65BT Spec and Replacement, IGBT Equivalent Finder, Cross Reference

NCE40TD65BT Specs and Replacement

Type Designator: NCE40TD65BT

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 286 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 136 pF

Package: TO247

NCE40TD65BT Substitution

- IGBTⓘ Cross-Reference Search

NCE40TD65BT datasheet

..1. Size:389K ncepower
nce40td65bt.pdf pdf_icon

PbFreeProduct NCE40TD65BT 650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High sp... See More ⇒

4.1. Size:1873K ncepower
nce40td65b.pdf pdf_icon

Pb Free Product NCE40TD65B 650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒

4.2. Size:1851K ncepower
nce40td65bp.pdf pdf_icon