STGB10M65DF2 IGBT. Datasheet pdf. Equivalent
Type Designator: STGB10M65DF2
Type: IGBT + Anti-Parallel Diode
Marking Code: G10M65DF2
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 115 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 7.4 nS
Coesⓘ - Output Capacitance, typ: 63 pF
Qgⓘ - Total Gate Charge, typ: 28 nC
Package: D2PAK
STGB10M65DF2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
STGB10M65DF2 Datasheet (PDF)
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