STGB10M65DF2 Datasheet and Replacement

STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in DPAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat)3 Low thermal resistance 1 Soft and very

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STGB10NB40LZN-CHANNEL CLAMPED 20A - DPAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB10NB40LZ CLAMPED

STGB10NB60SSTGP10NB60S16 A, 600 V, low drop IGBTFeatures Low on-voltage drop (VCE(sat)) High current capabilityTABTABApplications3 Light dimmer 3 121 Static relaysTO-220 D2PAK Motor driveDescriptionThis IGBT utilizes the advanced PowerMESH process featuring extremely low on-state voltage Figure 1. Internal schematic diagramdrop in low-fr

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STGP10N60L N-CHANNEL 10A - 600V - TO-220LOGIC LEVEL IGBTTYPE VCES VCE(sat) ICSTGP10N60L 600 V

STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V

STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor

STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off

STGB10NC60K10 A, 600 V short-circuit rugged IGBTFeatures Low on voltage drop (VCESAT) Short-circuit withstand time 10 sTABApplications High frequency motor controls31 SMPS and PFC in both hard switch and resonant topologiesDPAK Motor drivesDescriptionThis device utilizes the advanced Power MESH Figure 1. Internal schematic diagramprocess r

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off

STGP10NB60SSTGP10NB60SFP- STGB10NB60SN-CHANNEL 10A - 600V - TO-220/TO-220FP/DPAKPowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP10NB60S 600 V

STGB10H60DF, STGF10H60DF, STGP10H60DFTrench gate field-stop IGBT, H series 600 V, 10 A high speedDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution31 Safe parallelingDPAK Low thermal resistanceTAB Short-circuit rated Ultrafast soft recovery antiparallel diodeApplications332211 Motor cont

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant