STGWA30M65DF2 IGBT. Datasheet pdf. Equivalent
Type Designator: STGWA30M65DF2
Type: IGBT + Anti-Parallel Diode
Marking Code: G30M65DF2
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 258
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 13.4
Collector Capacity (Cc), typ, pF: 143
Total Gate Charge (Qg), typ, nC: 80
Package: TO247
STGWA30M65DF2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
STGWA30M65DF2 Datasheet (PDF)
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stgwa30ih65df.pdf
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STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 ATAB Tight parameter distribution Safe para
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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