AFGHL75T65SQDT Specs and Replacement
Type Designator: AFGHL75T65SQDT
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 152 pF
Package: TO247
AFGHL75T65SQDT Substitution - IGBTⓘ Cross-Reference Search
AFGHL75T65SQDT datasheet
afghl75t65sqdt.pdf
Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQDT offers the optimum performance with both low conduction and switching losses for a high www.onsemi.com efficiency operation in various applications, especially totem pole bridgeless PFC and DCDC block as well. 75 A, 650 V Feature... See More ⇒
afghl75t65sqdc.pdf
IGBT Hybrid, Field Stop, Trench 650 V, 75 A, TO247 AFGHL75T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and www.onsemi.com switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and ... See More ⇒
afghl75t65sq.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,... See More ⇒
afghl50t65sq.pdf
Field Stop Trench IGBT 50 A, 650 V AFGHL50T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in www.onsemi.com automotive application. It is a stand-alone IGBT. Features AEC-Q101 Qualified 50 A, 650 V Maximum Junction Temperature TJ = 175... See More ⇒
Specs: AFGHL40T65SPD, AFGHL40T65SQ, AFGHL40T65SQD, AFGHL50T65SQ, AFGHL50T65SQD, AFGHL50T65SQDC, AFGHL75T65SQ, AFGHL75T65SQDC, FGH75T65UPD, AFGY100T65SPD, AFGY120T65SPD, AFGY120T65SPD-B4, AFGY160T65SPD-B4, FGA15N120ANTDTU, FGA180N33AT, FGA25N120ANTDTU, FGA3060ADF
Keywords - AFGHL75T65SQDT transistor spec
AFGHL75T65SQDT cross reference
AFGHL75T65SQDT equivalent finder
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AFGHL75T65SQDT substitution
AFGHL75T65SQDT replacement
History: AFGHL75T65SQDC | AOD6B65MQ1E | RJH1CD7DPQ-E0 | AFGY120T65SPD | BG150B12UY3-I | IXXH75N60B3D1
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