FGB7N60UNDF PDF and Equivalents Search

 

FGB7N60UNDF Specs and Replacement


   Type Designator: FGB7N60UNDF
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 83 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 14 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   tr ⓘ - Rise Time, typ: 4.2 nS
   Coesⓘ - Output Capacitance, typ: 41 pF
   Package: D2PAK
 

 FGB7N60UNDF Substitution

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FGB7N60UNDF datasheet

 ..1. Size:363K  onsemi
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FGB7N60UNDF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Specs: FGB3056-F085 , FGB3236-F085 , FGI3236-F085 , FGB3440G2-F085 , FGD3440G2-F085 , FGP3440G2-F085 , FGB40T65SPD-F085 , FGB5N60UNDF , GT30F132 , FGD2736G3-F085 , FGD2736G3-F085V , FGD3040G2-F085C , FGB3040G2-F085C , FGD3040G2-F085V , FGD3050G2 , FGD3050G2V , FGD3245G2-F085 .

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