All IGBT. FGB7N60UNDF Datasheet

 

FGB7N60UNDF Datasheet and Replacement


   Type Designator: FGB7N60UNDF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 83 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 14 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 4.2 nS
   Coesⓘ - Output Capacitance, typ: 41 pF
   Package: D2PAK
      - IGBT Cross-Reference

 

FGB7N60UNDF Datasheet (PDF)

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FGB7N60UNDF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: NCE30TD60BP | FD200R12PT4_B6

Keywords - FGB7N60UNDF transistor datasheet

 FGB7N60UNDF cross reference
 FGB7N60UNDF equivalent finder
 FGB7N60UNDF lookup
 FGB7N60UNDF substitution
 FGB7N60UNDF replacement

 

 
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