IXGH15N120C IGBT. Datasheet pdf. Equivalent
Type Designator: IXGH15N120C
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 95 pF
Package: TO247
IXGH15N120C Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGH15N120C Datasheet (PDF)
ixgh15n120c.pdf
IXGH 15N120C VCES = 1200 VIGBTIXGT 15N120C IC25 = 30 AVCE(sat) = 3.8 VLightspeed Seriestfi(typ) = 115 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGVGES Continuous 20 VEVGEM Transient 30 V(TAB)IC25 TC = 25C30 AIC90 TC = 90C15 ATO-247 AD (IXGH)ICM TC =
ixgh15n120cd1.pdf
Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat)High Speed IGBT with DiodeIXGH/IXGT 15N120BD11200 V 30 A 3.2 VIXGH/IXGT 15N120CD11200 V 30 A 3.8 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247AD(IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGVGES Continuous 20 V CETABVGEM Transient 30 VIC25 TC = 25C30 ATO-2
ixgh15n120b2d1.pdf
Advance Technical InformationVCES =1200 VIXGH15N120B2D1HiPerFASTTM IGBTIC25 = 30 AIXGT15N120B2D1VCE(sat) = 3.3 VOptimized for 10-20 KHz hardtfi(typ) = 137 nsswitching and up to 100 KHzresonant switchingSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1200 V(IXGH)VCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGTABC
ixgh15n120b ixgt15n120b.pdf
IXGH 15N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 15N120B IC25 = 30 AVCE(sat) = 3.2 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C30 ATO-247 AD (IXGH)IC110 TC = 110C15 AICM TC = 25C, 1 ms 60 A
ixgh15n120b.pdf
IXGH 15N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 15N120B IC25 = 30 AVCE(sat) = 3.2 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C30 ATO-247 AD (IXGH)IC110 TC = 110C15 AICM TC = 25C, 1 ms 60 A
ixgh15n120bd1.pdf
Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat)High Speed IGBT with DiodeIXGH/IXGT 15N120BD11200 V 30 A 3.2 VIXGH/IXGT 15N120CD11200 V 30 A 3.8 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247AD(IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGVGES Continuous 20 V CETABVGEM Transient 30 VIC25 TC = 25C30 ATO-2
Datasheet: IXGH12N100U1 , IXGH12N60B , IXGH12N60BD1 , IXGH12N60C , IXGH12N60CD1 , IXGH12N90C , IXGH15N120B , IXGH15N120BD1 , SGT40N60NPFDPN , IXGH15N120CD1 , IXGH17N100 , IXGH17N100A , IXGH17N100AU1 , IXGH17N100U1 , IXGH20N100 , IXGH20N30 , IXGH20N30S .
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