All IGBT. IXGH15N120CD1 Datasheet

 

IXGH15N120CD1 Datasheet and Replacement


   Type Designator: IXGH15N120CD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 155 pF
   Qgⓘ - Total Gate Charge, typ: 69 nC
   Package: TO247
      - IGBT Cross-Reference

 

IXGH15N120CD1 Datasheet (PDF)

 ..1. Size:60K  ixys
 ixgh15n120cd1.pdf pdf_icon

IXGH15N120CD1

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat)High Speed IGBT with DiodeIXGH/IXGT 15N120BD11200 V 30 A 3.2 VIXGH/IXGT 15N120CD11200 V 30 A 3.8 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247AD(IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGVGES Continuous 20 V CETABVGEM Transient 30 VIC25 TC = 25C30 ATO-2

 3.1. Size:52K  ixys
 ixgh15n120c.pdf pdf_icon

IXGH15N120CD1

IXGH 15N120C VCES = 1200 VIGBTIXGT 15N120C IC25 = 30 AVCE(sat) = 3.8 VLightspeed Seriestfi(typ) = 115 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGVGES Continuous 20 VEVGEM Transient 30 V(TAB)IC25 TC = 25C30 AIC90 TC = 90C15 ATO-247 AD (IXGH)ICM TC =

 4.1. Size:66K  ixys
 ixgh15n120b2d1.pdf pdf_icon

IXGH15N120CD1

Advance Technical InformationVCES =1200 VIXGH15N120B2D1HiPerFASTTM IGBTIC25 = 30 AIXGT15N120B2D1VCE(sat) = 3.3 VOptimized for 10-20 KHz hardtfi(typ) = 137 nsswitching and up to 100 KHzresonant switchingSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1200 V(IXGH)VCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGTABC

 4.2. Size:529K  ixys
 ixgh15n120b ixgt15n120b.pdf pdf_icon

IXGH15N120CD1

IXGH 15N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 15N120B IC25 = 30 AVCE(sat) = 3.2 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C30 ATO-247 AD (IXGH)IC110 TC = 110C15 AICM TC = 25C, 1 ms 60 A

SHOW MORE

Datasheet: IXGH12N60B , IXGH12N60BD1 , IXGH12N60C , IXGH12N60CD1 , IXGH12N90C , IXGH15N120B , IXGH15N120BD1 , IXGH15N120C , SGT40N60NPFDPN , IXGH17N100 , IXGH17N100A , IXGH17N100AU1 , IXGH17N100U1 , IXGH20N100 , IXGH20N30 , IXGH20N30S , IXGH20N60B .

History: IXEH25N120D1 | FGH40N60SFDTU-F085 | RGTH40TS65D | AIHD06N60R | MGP7N60ED | SGR20N40L | IXRP15N120

Keywords - IXGH15N120CD1 transistor datasheet

 IXGH15N120CD1 cross reference
 IXGH15N120CD1 equivalent finder
 IXGH15N120CD1 lookup
 IXGH15N120CD1 substitution
 IXGH15N120CD1 replacement

 

 
Back to Top

 


 
.