FGH40T120SMD-F155 IGBT. Datasheet pdf. Equivalent
Type Designator: FGH40T120SMD-F155
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 555
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 25
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 47
Collector Capacity (Cc), typ, pF: 180
Total Gate Charge (Qg), typ, nC: 370
Package: TO247
FGH40T120SMD-F155 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGH40T120SMD-F155 Datasheet (PDF)
fgh40t120smd fgh40t120smd-f155.pdf
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IGBT - FS, Trench1200 V, 40 AFGH40T120SMDL4DescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field stop trench IGBTs offerwww.onsemi.comthe optimum performance for hard switching application such as solarinverter, UPS, welder and PFC applications.VCES ICFeatures1200 V 40 A FS Trench Technology, Positive Temperature Coeffi
Datasheet: FGH30S150P , FGH40N60SFDTU , FGH40N60SFDTU-F085 , FGH40N60SMD-F085 , FGH40N60SMDF-F085 , FGH40N65UFDTU , FGH40N65UFDTU-F085 , FGH40T100SMD , CRG60T60AN3H , FGH40T120SMDL4 , FGH40T120SQDNL4 , FGH40T65SH , FGH40T65SHDF , FGH40T65SHD-F155 , FGH40T65SPD-F085 , FGH40T65SQD , FGH40T65UPD .
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