All IGBT. FGH40T120SMDL4 Datasheet

 

FGH40T120SMDL4 IGBT. Datasheet pdf. Equivalent


   Type Designator: FGH40T120SMDL4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 555 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 42 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Qgⓘ - Total Gate Charge, typ: 370 nC
   Package: TO247-4

 FGH40T120SMDL4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH40T120SMDL4 Datasheet (PDF)

 ..1. Size:592K  onsemi
 fgh40t120smdl4.pdf

FGH40T120SMDL4 FGH40T120SMDL4

IGBT - FS, Trench1200 V, 40 AFGH40T120SMDL4DescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field stop trench IGBTs offerwww.onsemi.comthe optimum performance for hard switching application such as solarinverter, UPS, welder and PFC applications.VCES ICFeatures1200 V 40 A FS Trench Technology, Positive Temperature Coeffi

 2.1. Size:501K  1
 fgh40t120smd.pdf

FGH40T120SMDL4 FGH40T120SMDL4

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 2.2. Size:591K  onsemi
 fgh40t120smd fgh40t120smd-f155.pdf

FGH40T120SMDL4 FGH40T120SMDL4

IGBT - Field Stop, Trench1200 V, 40 AFGH40T120SMD,FGH40T120SMD-F155Descriptionwww.onsemi.comUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field stop trench IGBTs offerthe optimum performance for hard switching application such as solarCinverter, UPS, welder and PFC applications.Features FS Trench Technology, Positive Temperature

 4.1. Size:469K  onsemi
 fgh40t120sqdnl4.pdf

FGH40T120SMDL4 FGH40T120SMDL4

IGBT - Ultra Field StopFGH40T120SQDNL4This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the devicewww.onsemi

Datasheet: FGH40N60SFDTU , FGH40N60SFDTU-F085 , FGH40N60SMD-F085 , FGH40N60SMDF-F085 , FGH40N65UFDTU , FGH40N65UFDTU-F085 , FGH40T100SMD , FGH40T120SMD-F155 , CRG60T60AN3H , FGH40T120SQDNL4 , FGH40T65SH , FGH40T65SHDF , FGH40T65SHD-F155 , FGH40T65SPD-F085 , FGH40T65SQD , FGH40T65UPD , FGH40T65UQDF .

 

 
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