FGH40T120SQDNL4 Specs and Replacement
Type Designator: FGH40T120SQDNL4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 454 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 160 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.78 V @25℃
tr ⓘ - Rise Time, typ: 33 nS
Coesⓘ - Output Capacitance, typ: 140 pF
Package: TO247-4
FGH40T120SQDNL4 Substitution - IGBTⓘ Cross-Reference Search
FGH40T120SQDNL4 datasheet
fgh40t120sqdnl4.pdf
IGBT - Ultra Field Stop FGH40T120SQDNL4 This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device www.onsemi... See More ⇒
fgh40t120smd.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fgh40t120smd fgh40t120smd-f155.pdf
IGBT - Field Stop, Trench 1200 V, 40 A FGH40T120SMD, FGH40T120SMD-F155 Description www.onsemi.com Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar C inverter, UPS, welder and PFC applications. Features FS Trench Technology, Positive Temperature... See More ⇒
fgh40t120smdl4.pdf
IGBT - FS, Trench 1200 V, 40 A FGH40T120SMDL4 Description Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field stop trench IGBTs offer www.onsemi.com the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. VCES IC Features 1200 V 40 A FS Trench Technology, Positive Temperature Coeffi... See More ⇒
Specs: FGH40N60SFDTU-F085, FGH40N60SMD-F085, FGH40N60SMDF-F085, FGH40N65UFDTU, FGH40N65UFDTU-F085, FGH40T100SMD, FGH40T120SMD-F155, FGH40T120SMDL4, FGH60N60SFD, FGH40T65SH, FGH40T65SHDF, FGH40T65SHD-F155, FGH40T65SPD-F085, FGH40T65SQD, FGH40T65UPD, FGH40T65UQDF, FGH40T70SHD
Keywords - FGH40T120SQDNL4 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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