All IGBT. FGH60N60UFDTU-F085 Datasheet

 

FGH60N60UFDTU-F085 IGBT. Datasheet pdf. Equivalent


   Type Designator: FGH60N60UFDTU-F085
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 298
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 120
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 60
   Collector Capacity (Cc), typ, pF: 330
   Total Gate Charge (Qg), typ, nC: 192
   Package: TO247

 FGH60N60UFDTU-F085 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH60N60UFDTU-F085 Datasheet (PDF)

 0.1. Size:1128K  onsemi
fgh60n60ufdtu-f085.pdf

FGH60N60UFDTU-F085
FGH60N60UFDTU-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 3.1. Size:756K  fairchild semi
fgh60n60ufd.pdf

FGH60N60UFDTU-F085
FGH60N60UFDTU-F085

April 2009FGH60N60UFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) = 1.9V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc High input impedancetion and swi

 6.1. Size:391K  fairchild semi
fgh60n60smd.pdf

FGH60N60UFDTU-F085
FGH60N60UFDTU-F085

March 2011FGH60N60SMDtm600V, 60A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operatingInverter, UPS, SMPS, IH and PFC applications where low con- High c

 6.2. Size:756K  fairchild semi
fgh60n60sfd.pdf

FGH60N60UFDTU-F085
FGH60N60UFDTU-F085

April 2009FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and swi

 6.3. Size:647K  fairchild semi
fgh60n60sf.pdf

FGH60N60UFDTU-F085
FGH60N60UFDTU-F085

July 2008FGH60N60SFtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and switc

 6.4. Size:693K  onsemi
fgh60n60smd.pdf

FGH60N60UFDTU-F085
FGH60N60UFDTU-F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.5. Size:768K  onsemi
fgh60n60sfd.pdf

FGH60N60UFDTU-F085
FGH60N60UFDTU-F085

August 2008FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and sw

 6.6. Size:396K  onsemi
fgh60n60sf.pdf

FGH60N60UFDTU-F085
FGH60N60UFDTU-F085

IGBT - Field Stop600 V, 60 AFGH60N60SFDescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for solar inverter, UPS,www.onsemi.comwelder and PFC applications where low conduction and switchinglosses are essential.VCES ICFeatures600 V 60 A High Current CapabilityC Low Saturation Voltage: VCE(sat) =

 6.7. Size:476K  onsemi
fgh60n60sfdtu-f085.pdf

FGH60N60UFDTU-F085
FGH60N60UFDTU-F085

IGBT - Field Stop600 V, 60 AFGH60N60SFDTU-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorsnew series of Field Stop IGBTs offer the optimum performance forwww.onsemi.comAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.CFeatures High Current Capability Low Saturation Voltage: VCE(s

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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