IXGH17N100AU1 IGBT. Datasheet pdf. Equivalent

   Type Designator: IXGH17N100AU1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 34 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qgⓘ - Total Gate Charge, typ: 100 nC
   Package: TO247

IXGH17N100AU1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGH17N100AU1 Datasheet (PDF)

..1. Size:76K ixys
ixgh17n100au1.pdf

VCES IC25 VCE(sat)Low VCE(sat) IGBT with Diode IXGH 17 N100U1 1000 V 34 A 3.5 VHigh speed IGBT with Diode IXGH 17 N100AU1 1000 V 34 A 4.0 VCombi PacksSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C34 AG = Gate, C = Collector,IC90

3.1. Size:48K ixys
ixgh17n100a.pdf

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 VHigh speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C34 AIC90 TC = 90C17 A TO-204 AE (IXGM)ICM TC = 25C

4.1. Size:76K ixys
ixgh17n100u1.pdf