FGH75T65SQD PDF and Equivalents Search

 

FGH75T65SQD Specs and Replacement

Type Designator: FGH75T65SQD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 375 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 10 nS

Coesⓘ - Output Capacitance, typ: 155 pF

Package: TO247

 FGH75T65SQD Substitution

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FGH75T65SQD datasheet

 ..1. Size:522K  onsemi
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FGH75T65SQD

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature TJ... See More ⇒

 0.1. Size:698K  onsemi
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FGH75T65SQD

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc... See More ⇒

 0.2. Size:1229K  onsemi
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FGH75T65SQD

FGH75T65SQDT 650 V, 75 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using novel field stop IGBT technology, ON semiconductor s new series of field stop 4th generation IGBTs offer he optimum Positive Temperature Co-efficient for Easy Parallel Operating performance for solar inverter, UPS, welder, telecom, ESS and High Curr... See More ⇒

 5.1. Size:570K  onsemi
fgh75t65shdtl4.pdf pdf_icon

FGH75T65SQD

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SHDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc... See More ⇒

Specs: FGH60N60SFDTU-F085, FGH60N60UFDTU-F085, FGH60T65SHD, FGH60T65SQD-F155, FGH75T65SHD, FGH75T65SHDT, FGH75T65SHDTL4, FGH75T65SHDTLN4, FGPF4633, FGH75T65SQDT, FGH75T65SQDTL4, FGH75T65UPD-F155, FGH75T65UPD-F085, FGHL40S65UQ, FGHL40T65MQD, FGHL50T65MQD, FGHL50T65MQDT

Keywords - FGH75T65SQD transistor spec

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