FGH75T65SQD IGBT. Datasheet pdf. Equivalent
Type Designator: FGH75T65SQD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 375
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 150
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 10
Collector Capacity (Cc), typ, pF: 155
Total Gate Charge (Qg), typ, nC: 128
Package: TO247
FGH75T65SQD Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGH75T65SQD Datasheet (PDF)
fgh75t65sqd.pdf
IGBT - Field Stop, Trench650 V, 75 AFGH75T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, Welder, Telecom, ESS and PFCapplications where low conduction and switching losses are essential.CFeatures Maximum Junction Temperature : TJ
fgh75t65sqdtl4.pdf
IGBT - Field Stop, Trench650 V, 75 AFGH75T65SQDTL4DescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 75 A Maximum Junc
fgh75t65sqdt.pdf
FGH75T65SQDT650 V, 75 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature: TJ = 175oC Using novel field stop IGBT technology, ON semiconductors new series of field stop 4th generation IGBTs offer he optimum Positive Temperature Co-efficient for Easy Parallel Operatingperformance for solar inverter, UPS, welder, telecom, ESS and High Curr
fgh75t65shdtl4.pdf
IGBT - Field Stop, Trench650 V, 75 AFGH75T65SHDTL4DescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 75 A Maximum Junc
fgh75t65shdtln4.pdf
IGBT - Field Stop, Trench650 V, 75 AProduct PreviewFGH75T65SHDTLN4Using the novel field stop 3rd generation IGBT technology,FGH75T65SHDTLN4 offers the optimum performance for solarwww.onsemi.cominverter, UPS, welder, telecom, ESS and PFC applications where lowconduction loss and switching loss are essential.Features75 A, 650 V Maximum Junction Temperature: TJ = 175C
fgh75t65shd.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgh75t65shdt.pdf
FGH75T65SHDT650 V, 75 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature: TJ = 175oC Using novel field stop IGBT technology, ON Semiconductors new series of field stop 3rd generation IGBTs offer the optimum Positive Temperature Co-efficient for Easy Parallel Operatingperformance for solar inverter, UPS, welder, telecom, ESS and High Cur
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