FGH75T65SQD Specs and Replacement
Type Designator: FGH75T65SQD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 10 nS
Coesⓘ - Output Capacitance, typ: 155 pF
Package: TO247
FGH75T65SQD Substitution - IGBT ⓘ Cross-Reference Search
FGH75T65SQD datasheet
fgh75t65sqd.pdf
IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature TJ... See More ⇒
fgh75t65sqdtl4.pdf
IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc... See More ⇒
fgh75t65sqdt.pdf
FGH75T65SQDT 650 V, 75 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using novel field stop IGBT technology, ON semiconductor s new series of field stop 4th generation IGBTs offer he optimum Positive Temperature Co-efficient for Easy Parallel Operating performance for solar inverter, UPS, welder, telecom, ESS and High Curr... See More ⇒
fgh75t65shdtl4.pdf
IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SHDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc... See More ⇒
Specs: FGH60N60SFDTU-F085, FGH60N60UFDTU-F085, FGH60T65SHD, FGH60T65SQD-F155, FGH75T65SHD, FGH75T65SHDT, FGH75T65SHDTL4, FGH75T65SHDTLN4, FGPF4633, FGH75T65SQDT, FGH75T65SQDTL4, FGH75T65UPD-F155, FGH75T65UPD-F085, FGHL40S65UQ, FGHL40T65MQD, FGHL50T65MQD, FGHL50T65MQDT
Keywords - FGH75T65SQD transistor spec
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History: IGC11T120T8L | IXSK50N60AU1 | 6MBP100RA060 | IGC109T120T6RL
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