All IGBT. FGHL50T65MQD Datasheet

 

FGHL50T65MQD Datasheet and Replacement


   Type Designator: FGHL50T65MQD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 268 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 85 pF
   Package: TO247
      - IGBT Cross-Reference

 

FGHL50T65MQD Datasheet (PDF)

 ..1. Size:331K  onsemi
fghl50t65mqd.pdf pdf_icon

FGHL50T65MQD

Field Stop Trench IGBT650 V, 50 AFGHL50T65MQDField stop 4th generation mid speed IGBT technology and fullcurrent rated copak Diode technology.Featureswww.onsemi.com Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel OperatingBVCES VCE(sat) TYP IC MAX High Current Capability650 V 1.45 V 50 A Low Saturation Voltage: VC

 0.1. Size:413K  onsemi
fghl50t65mqdt.pdf pdf_icon

FGHL50T65MQD

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 5.1. Size:387K  onsemi
fghl50t65sqdt.pdf pdf_icon

FGHL50T65MQD

IGBT - Field Stop, Trench650 V, 50 AProduct PreviewFGHL50T65SQDTUsing novel field stop IGBT technology, ON Semiconductors newwww.onsemi.comseries of field stop 4th generation IGBTs offer the optimumperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.50 A, 650 VVCESat = 1.47 V (Typ.)Feature

 5.2. Size:375K  onsemi
fghl50t65sq.pdf pdf_icon

FGHL50T65MQD

FGHL50T65SQIGBT for PFC Applications650 V, 50 A, TO-247-3LFeatures Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel Operatingwww.onsemi.com High Current Capability Low Saturation Voltage: VCE(sat) =1.6 V (Typ.) @ IC = 50 A 100% of the Parts Tested for ILM (Note 1)BVCES VCE(sat) TYP IC MAX High Input Impedance

Datasheet: FGH75T65SHDTLN4 , FGH75T65SQD , FGH75T65SQDT , FGH75T65SQDTL4 , FGH75T65UPD-F155 , FGH75T65UPD-F085 , FGHL40S65UQ , FGHL40T65MQD , IKW30N60H3 , FGHL50T65MQDT , FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF , FGP15N60UNDF .

History: IXXH100N60B3

Keywords - FGHL50T65MQD transistor datasheet

 FGHL50T65MQD cross reference
 FGHL50T65MQD equivalent finder
 FGHL50T65MQD lookup
 FGHL50T65MQD substitution
 FGHL50T65MQD replacement

 

 
Back to Top

 


 
.