FGHL50T65MQD Datasheet and Replacement
Type Designator: FGHL50T65MQD
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 268 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 85 pF
Package: TO247
- IGBT Cross-Reference
FGHL50T65MQD Datasheet (PDF)
fghl50t65mqd.pdf

Field Stop Trench IGBT650 V, 50 AFGHL50T65MQDField stop 4th generation mid speed IGBT technology and fullcurrent rated copak Diode technology.Featureswww.onsemi.com Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel OperatingBVCES VCE(sat) TYP IC MAX High Current Capability650 V 1.45 V 50 A Low Saturation Voltage: VC
fghl50t65mqdt.pdf

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fghl50t65sqdt.pdf

IGBT - Field Stop, Trench650 V, 50 AProduct PreviewFGHL50T65SQDTUsing novel field stop IGBT technology, ON Semiconductors newwww.onsemi.comseries of field stop 4th generation IGBTs offer the optimumperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.50 A, 650 VVCESat = 1.47 V (Typ.)Feature
fghl50t65sq.pdf

FGHL50T65SQIGBT for PFC Applications650 V, 50 A, TO-247-3LFeatures Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel Operatingwww.onsemi.com High Current Capability Low Saturation Voltage: VCE(sat) =1.6 V (Typ.) @ IC = 50 A 100% of the Parts Tested for ILM (Note 1)BVCES VCE(sat) TYP IC MAX High Input Impedance
Datasheet: FGH75T65SHDTLN4 , FGH75T65SQD , FGH75T65SQDT , FGH75T65SQDTL4 , FGH75T65UPD-F155 , FGH75T65UPD-F085 , FGHL40S65UQ , FGHL40T65MQD , IKW30N60H3 , FGHL50T65MQDT , FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF , FGP15N60UNDF .
History: IXXH100N60B3
Keywords - FGHL50T65MQD transistor datasheet
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History: IXXH100N60B3



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