FGHL75T65MQD PDF and Equivalents Search

 

FGHL75T65MQD Specs and Replacement

Type Designator: FGHL75T65MQD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 375 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 29 nS

Coesⓘ - Output Capacitance, typ: 131 pF

Package: TO247

 FGHL75T65MQD Substitution

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FGHL75T65MQD datasheet

 ..1. Size:334K  onsemi
 fghl75t65mqd.pdf pdf_icon

FGHL75T65MQD

Field Stop Trench IGBT 650 V, 75 A FGHL75T65MQD Field stop 4th generation mid speed IGBT technology and Full current rated copak Diode technology. Features www.onsemi.com Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating BVCES VCE(sat) TYP IC MAX High Current Capability 650 V 1.45 V 75 A Low Saturation Voltage VC... See More ⇒

 0.1. Size:241K  onsemi
 fghl75t65mqdt.pdf pdf_icon

FGHL75T65MQD

DATA SHEET www.onsemi.com Field Stop Trench IGBT 75 A, 650 V 650 V, 75 A VCESat = 1.45 V FGHL75T65MQDT C Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features G Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating E High Current Capability Low Saturation Voltage VC... See More ⇒

 5.1. Size:410K  onsemi
 afghl75t65sqdc.pdf pdf_icon

FGHL75T65MQD

IGBT Hybrid, Field Stop, Trench 650 V, 75 A, TO247 AFGHL75T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and www.onsemi.com switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and ... See More ⇒

 5.2. Size:336K  onsemi
 fghl75t65lqdt.pdf pdf_icon

FGHL75T65MQD

IGBT - Field Stop, Trench 75 A, 650 V FGHL75T65LQDT Description Field stop 4th generation Low Vce(sat) IGBT technology and Full current rated copak Diode technology. www.onsemi.com Features VCES IC VCE(Sat) Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating 650 V 75 A 1.15 V High Current Capability C Low Saturatio... See More ⇒

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Specs: FGH75T65UPD-F085, FGHL40S65UQ, FGHL40T65MQD, FGHL50T65MQD, FGHL50T65MQDT, FGHL50T65SQ, FGHL50T65SQDT, FGHL75T65LQDT, RJH60F7BDPQ-A0, FGHL75T65MQDT, FGP10N60UNDF, FGP15N60UNDF, FGPF15N60UNDF, FGPF4565, FGY100T65SCDT, FGY120T65SPD-F085, FGY40T120SMD

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