AIKP20N60CT Specs and Replacement
Type Designator: AIKP20N60CT
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 156 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 14 nS
Coesⓘ - Output Capacitance, typ: 71 pF
Package: TO220
AIKP20N60CT Substitution - IGBT ⓘ Cross-Reference Search
AIKP20N60CT datasheet
aikp20n60ct.pdf
AIKP20N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled diode C Features Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 150 C G Dynamically stress tested E Sho... See More ⇒
Specs: AIGW50N65F5, AIGW50N65H5, AIHD04N60R, AIHD06N60R, AIHD10N60R, AIHD15N60R, AIHD15N60RF, AIKB20N60CT, GT30J127, AIKQ100N60CT, AIKQ120N60CT, AIKW20N60CT, AIKW30N60CT, AIKW40N65DF5, AIKW40N65DH5, AIKW50N60CT, AIKW50N65DF5
Keywords - AIKP20N60CT transistor spec
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History: STGB20V60F | SGP5N60RUF | SGR2N60UFD
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