AIKP20N60CT Datasheet and Replacement
Type Designator: AIKP20N60CT
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 156 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 14 nS
Coesⓘ - Output Capacitance, typ: 71 pF
Package: TO220
AIKP20N60CT substitution
AIKP20N60CT Datasheet (PDF)
aikp20n60ct.pdf
AIKP20N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery anti-parallel Emitter Controlled diodeCFeatures: Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum Junction Temperature 150CG Dynamically stress testedE Sho
Datasheet: AIGW50N65F5 , AIGW50N65H5 , AIHD04N60R , AIHD06N60R , AIHD10N60R , AIHD15N60R , AIHD15N60RF , AIKB20N60CT , IXGH60N60 , AIKQ100N60CT , AIKQ120N60CT , AIKW20N60CT , AIKW30N60CT , AIKW40N65DF5 , AIKW40N65DH5 , AIKW50N60CT , AIKW50N65DF5 .
History: MMGT75W120XB6C | GT60M103 | BUK856-800A
Keywords - AIKP20N60CT transistor datasheet
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History: MMGT75W120XB6C | GT60M103 | BUK856-800A
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