IGB15N65S5 IGBT. Datasheet pdf. Equivalent
Type Designator: IGB15N65S5
Type: IGBT
Marking Code: G15ES5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 105 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 35 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 14 nS
Coesⓘ - Output Capacitance, typ: 20 pF
Qgⓘ - Total Gate Charge, typ: 38 nC
Package: TO263
IGB15N65S5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGB15N65S5 Datasheet (PDF)
igb15n65s5.pdf
IGB15N65S5High speed switching series fifth generationTRENCHSTOPTM 5 high speed soft switching IGBTFeatures and Benefits: CHigh speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q EG Maxim
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