IKA08N65ET6 Datasheet and Replacement
Type Designator: IKA08N65ET6
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 27.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 16 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 29 pF
Package: TO220F
- IGBT Cross-Reference
IKA08N65ET6 Datasheet (PDF)
ika08n65et6.pdf

IKA08N65ET6TRENCHSTOP IGBT6IGBT in trench and field-stop technology with soft, fast recovery anti-parallelRapid diodeCFeatures and Benefits: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 3sTrench and field-stop technology for 650V applications offers :G very tight parameter distributionE high rugg
ika08n65h5.pdf

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKA08N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKA08N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode
ika08n65f5.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKA08N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKA08N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal
Datasheet: IHFW40N65R5S , IHW25N120E1 , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , IHW30N65R5 , IHW40N120R5 , IHW40N135R5 , GT30J122 , IKA10N65ET6 , IKA15N65ET6 , IKB15N65EH5 , IKB20N65EH5 , IKB30N65EH5 , IKB30N65ES5 , IKB40N65EF5 , IKB40N65EH5 .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
Keywords - IKA08N65ET6 transistor datasheet
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History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50



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