IKB20N65EH5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKB20N65EH5
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 38 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 30 pF
Package: TO263
IKB20N65EH5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKB20N65EH5 Datasheet (PDF)
ikb20n65eh5.pdf
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ikb20n60h3 rev1 1g.pdf
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ikb20n60t.pdf
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ikb20n60trev2 4g.pdf
IKB20N60T TrenchStop Series p Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners Trench
ikb20n60h3.pdf
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aikb20n60ct.pdf
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