All IGBT. IKB20N65EH5 Datasheet

 

IKB20N65EH5 Datasheet and Replacement


   Type Designator: IKB20N65EH5
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 38 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 21 nS
   Coesⓘ - Output Capacitance, typ: 30 pF
   Package: TO263
      - IGBT Cross-Reference

 

IKB20N65EH5 Datasheet (PDF)

 ..1. Size:1565K  infineon
ikb20n65eh5.pdf pdf_icon

IKB20N65EH5

IKB20N65EH5High speed switching series 5th generationTRENCHSTOPTM 5 high speed switching IGBT copacked with full ratedcurrent RAPID 1 anti parallel diodeCFeatures and Benefits:High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies 650V breakdown voltageG Low QGE IGBT copacked with full rated current RAPID 1 fas

 7.1. Size:435K  infineon
ikp20n60t ikb20n60t ikw20n60t.pdf pdf_icon

IKB20N65EH5

IKP20N60T, IKB20N60T TrenchStop Series IKW20N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and F

 7.2. Size:1537K  infineon
ikb20n60h3 rev1 1g.pdf pdf_icon

IKB20N65EH5

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKB20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

 7.3. Size:685K  infineon
ikb20n60t.pdf pdf_icon

IKB20N65EH5

IKB20N60T TRENCHSTOP Series p Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum G

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - IKB20N65EH5 transistor datasheet

 IKB20N65EH5 cross reference
 IKB20N65EH5 equivalent finder
 IKB20N65EH5 lookup
 IKB20N65EH5 substitution
 IKB20N65EH5 replacement

 

 
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