IKB20N65EH5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKB20N65EH5
Type: IGBT + Anti-Parallel Diode
Marking Code: K20EEH5
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 125
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 38
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
Maximum G-E Threshold Voltag |VGE(th)|, V: 4.8
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 21
Collector Capacity (Cc), typ, pF: 30
Total Gate Charge (Qg), typ, nC: 48
Package: TO263
IKB20N65EH5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKB20N65EH5 Datasheet (PDF)
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