IKB30N65EH5 Datasheet and Replacement
Type Designator: IKB30N65EH5
Type: IGBT + Anti-Parallel Diode
Marking Code: K30EEH5
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 188 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 55 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 28 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Qg ⓘ - Total Gate Charge, typ: 70 nC
Package: TO263
IKB30N65EH5 substitution
IKB30N65EH5 Datasheet (PDF)
ikb30n65eh5.pdf

IKB30N65EH5High speed switching series 5th generationTRENCHSTOPTM 5 high speed switching IGBT copacked with full ratedcurrent RAPID 1 anti parallel diodeCFeatures and Benefits:High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies 650V breakdown voltageG Low QGE IGBT copacked with full rated current RAPID 1 fas
ikb30n65es5.pdf

IKB30N65ES5High speed switching series 5th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat 650V breakdown voltageG Low
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: STGW75M65DF2
Keywords - IKB30N65EH5 transistor datasheet
IKB30N65EH5 cross reference
IKB30N65EH5 equivalent finder
IKB30N65EH5 lookup
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History: STGW75M65DF2



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