IKB30N65EH5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKB30N65EH5
Type: IGBT + Anti-Parallel Diode
Marking Code: K30EEH5
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 188
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 55
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
Maximum G-E Threshold Voltag |VGE(th)|, V: 4.8
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 28
Collector Capacity (Cc), typ, pF: 55
Total Gate Charge (Qg), typ, nC: 70
Package: TO263
IKB30N65EH5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKB30N65EH5 Datasheet (PDF)
ikb30n65eh5.pdf
IKB30N65EH5High speed switching series 5th generationTRENCHSTOPTM 5 high speed switching IGBT copacked with full ratedcurrent RAPID 1 anti parallel diodeCFeatures and Benefits:High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies 650V breakdown voltageG Low QGE IGBT copacked with full rated current RAPID 1 fas
ikb30n65es5.pdf
IKB30N65ES5High speed switching series 5th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat 650V breakdown voltageG Low
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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